Extraordinary optical gain from silicon implanted with erbium
نویسندگان
چکیده
Here we report on measurements of optical gain at 1.5 m in crystalline silicon. Gain is achieved by the incorporation of the rare earth erbium in silicon. A method was developed to enable the gain measurement in short silicon waveguides. Crucially, gain values obtained are significantly greater than previously supposed. We have measured a lower limit for the optical cross section for Er3+ of 5 10−19 cm2, 30 times higher than previously anticipated. Given these higher values, this system now offers a realistic route to the production of electrically pumped silicon optical amplifier and laser devices using standard silicon process technology. © 2007 American Institute of Physics. DOI: 10.1063/1.2797975
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